???????????????????????????????? SSF8205U ? main product characteristics: g1 d2 g2 s2 d1 s1 8205u v dss 18v r ds (on) 20mohm(typ.) i d 4.5a ? silikron semiconductor co.,ltd. 2011.05.25 version :1.0 page 1 of 9 www.silikron.com ? marking and pin assignment ? sot23-6 ? schematic diagram ? features and benefits: ? ? ? ? advanced trench mosfet process technology ? special designed for buttery protection, load switching and general power management ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 150 operating temperature description: it utilizes the latest trench proc essing techniques to achieve the high cell density and reduces the on-resistance with high repetitive aval anche rating. these features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching app lication and a wide variety of other applications ? absolute max rating: parameter symbol limit unit drain-source voltage v ds 18 v gate-source voltage v gs 10 v i d 4.5 a drain current-continuous@ current-pulsed (note 1) i dm 25 a maximum power dissipation p d 1.25 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal resistance thermal resistance,junction-to-ambient (note 2) r ja 100 /w
???????????????????????????????? SSF8205U ? ? silikron semiconductor co.,ltd. 2011.05.25 version : 1.0 page 2 of 9 www.silikron.com ? electrical characterizes @t a =25 unless otherwise specified parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 18 v zero gate voltage drain current i dss v ds =18v,v gs =0v 1 a gate-body leakage current i gss v gs =10v,v ds =0v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 0.5 0.8 1.2 v v gs =4.5v, i d =4.5a 20 30 m ? drain-source on-state resistance r ds(on) v gs =2.5v, i d =3.5a 25 45 m ? forward transconductance g fs v ds =5v,i d =4.5a 10 s dynamic characteristics (note4) input capacitance c lss 800 pf output capacitance c oss 155 pf reverse transfer capacitance c rss v ds =8v,v gs =0v, f=1.0mhz 125 pf switching characteristics (note 4) turn-on delay time t d(on) 18.3 ns turn-on rise time t r 4.8 ns turn-off delay time t d(off) 43.5 ns turn-off fall time t f v dd =10v,i d =1a v gs =4v,r gen =10 ? 20 ns total gate charge q g 11 nc gate-source charge q gs 2.2 nc gate-drain charge q gd v ds =10v,i d =4.5a, v gs =4v 2.5 nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =2a 0.8 1.2 v diode forward current (note 2) i s 4.5 a
???????????????????????????????? SSF8205U ? test circuits and waveforms ? silikron semiconductor co.,ltd. 2011.05.25 version : 1.0 page 3 of 9 www.silikron.com ? switch waveforms: notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not s ubject to production testing.
???????????????????????????????? SSF8205U ? typical electrical and thermal characteristics vgs gate-source voltage (v) i d - drain current (a) i d - drain current (a) vds drain-source voltage (v) ? ? ? ? ? ? ? ? ? ? ? ? figure 1: typical output characteristics ? figure 2: transfer characteristics ? normalized on-resistance t j -junction temperature( ) ? ? ? ? ? ? ? ? ? ? ? rdson on-resistance( ) i d - drain current (a) ? figure 3: drain-source on-resistance figure 4 drain-source on-resistance ? rdson on-resistance(m ) vgs gate-source voltage (v) ? ? ? ? ? ? ? ? ? ? ? silikron semiconductor co.,ltd. 2011.05.25 version : 1.0 page 4 of 9 www.silikron.com ? ? ? vsd source-drain voltage (v) i - reverse drain current (a) s ? figure 5 : source- drain diode forward ? figure 6: rdson vs vgs ? ?
???????????????????????????????? SSF8205U ? ? ? silikron semiconductor co.,ltd. 2011.05.25 version : 1.0 page 5 of 9 www.silikron.com ? ? ? ? ? ? ? ? ? ? ? t j -junction temperature( ) p d power(w) i d - drain current (a t j -junction temperature( ) ? figure 8 drain current figure 7: power dissipation ? ? ? ? ? ? ? ? ? ? ? ? vgs gate-source voltage (v) qg gate charge (nc) c capacitance (pf) vds drain-source voltage (v) figure 9 gate charge ? figure 10: capacitance vs vds ? ? ? ? ? ? ? ? ? ? ? ? ? figure 11: safe operation area ? ? ? ? ?
???????????????????????????????? SSF8205U ? ? ? r(t),normalized effective transient thermal im p edance ? ? ? ? ? ? ? ? ? ? ? square wave pulse duration(sec) ? ? figure 12: normalized maximum transient thermal impedance ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? silikron semiconductor co.,ltd. 2011.05.25 version : 1.0 page 6 of 9 www.silikron.com ?
???????????????????????????????? SSF8205U ? mechanical data sot23-6 dimensions in millimeters (unit:mm) notes 1. all dimensions are in millimeters. 2. dimensions are inclusive of plating 3. package body sizes exclude mold flash and gate burrs . mold flash at the non-lead sides should be less than 6 mils. 4. dimension l is m easured in gauge plane. 5. controlling dimension is millim eter, converted inch dimensions are not necessarily exact. ? silikron semiconductor co.,ltd. 2011.05.25 version : 1.0 page 7 of 9 www.silikron.com ?
???????????????????????????????? SSF8205U ? ? silikron semiconductor co.,ltd. 2011.05.25 version : 1.0 page 8 of 9 www.silikron.com ? ordering and marking information device marking: 8205u package (available) sot23-6 operating temperature range c : -55 to 150 oc devices per unit package type units/ tube tubes/ inner box units/ inner box inner boxes/ carton box units/ carton box sot23-6 3000pcs 10pcs 30 000pcs 4pcs 120000pcs reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 or 150 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =125 or 150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
???????????????????????????????? SSF8205U ? ? silikron semiconductor co.,ltd. 2011.05.25 version : 1.0 page 9 of 9 www.silikron.com ? attention: any and all silikron products described or contained here in do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reason ably expected to result in serious physical and/or material damage. consult with your silikron representative nearest you bef ore using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures t hat result from using product s at values that exceed, even momentarily, rated values (such as maximum rating s, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contai ned herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functi ons of the described products as mounted in the customer?s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mount ed in the customer?s products or equipment. silikron semiconductor co.,ltd. strives to supply high- quality high-reliability prod ucts. however, any and all semiconductor products fail with some probability. it is possibl e that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt sa fety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant desig n, and structural design. in the event that any or all silik ron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorit ies concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information st orage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellect ual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing e quipment, refer to the "deliv ery specification" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specifications and information herein are subject to change without notice. customer service worldwide sales and service : sales@silikron.com technical support: technical@silikron.com suzhou silikron semiconductor corp. building ? 11a ? suchun ? industrial ? square, ? 428# ? xinglong ? street, ? suzhou ? p. r . ? china ? tel: (86-512) 62560688 fax: (86-512) 65160705 e-mail: sales@silikron.com
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